SiC based Miniaturized Devices (Record no. 133703)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 05181naaaa2201189uu 4500 |
| 001 - CONTROL NUMBER | |
| control field | https://directory.doabooks.org/handle/20.500.12854/68646 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20231113135351.0 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | oapen |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m o d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr|mn|---annan |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 20210501s2020 xx |||||o ||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | books978-3-03936-011-6 |
| International Standard Book Number | 9783039360109 |
| International Standard Book Number | 9783039360116 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | oapen |
| Transcribing agency | oapen |
| 024 7# - OTHER STANDARD IDENTIFIER | |
| Standard number or code | 10.3390/books978-3-03936-011-6 |
| Terms of availability | doi |
| 041 0# - LANGUAGE CODE | |
| Language code of text/sound track or separate title | eng |
| 042 ## - AUTHENTICATION CODE | |
| Authentication code | dc |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TBX |
| Source | bicssc |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Saddow, Stephen Edward |
| Relationship | edt |
| 245 10 - TITLE STATEMENT | |
| Title | SiC based Miniaturized Devices |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. | |
| Place of publication, distribution, etc. | Basel, Switzerland |
| Name of publisher, distributor, etc. | MDPI - Multidisciplinary Digital Publishing Institute |
| Date of publication, distribution, etc. | 2020 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 electronic resource (170 p.) |
| 506 0# - RESTRICTIONS ON ACCESS NOTE | |
| Terms governing access | Open Access |
| Source of term | star |
| Standardized terminology for access restriction | Unrestricted online access |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense. |
| 540 ## - TERMS GOVERNING USE AND REPRODUCTION NOTE | |
| Terms governing use and reproduction | Creative Commons |
| Use and reproduction rights | https://creativecommons.org/licenses/by/4.0/ |
| Source of term | cc |
| -- | https://creativecommons.org/licenses/by/4.0/ |
| 546 ## - LANGUAGE NOTE | |
| Language note | English |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | History of engineering & technology |
| Source of heading or term | bicssc |
| 653 ## - INDEX TERM--UNCONTROLLED | |
| Uncontrolled term | high-power impulse magnetron sputtering (HiPIMS) |
| Uncontrolled term | silicon carbide |
| Uncontrolled term | aluminum nitride |
| Uncontrolled term | thin film |
| Uncontrolled term | Rutherford backscattering spectrometry (RBS) |
| Uncontrolled term | grazing incidence X-ray diffraction (GIXRD) |
| Uncontrolled term | Raman spectroscopy |
| Uncontrolled term | 6H-SiC |
| Uncontrolled term | indentation |
| Uncontrolled term | deformation |
| Uncontrolled term | material removal mechanisms |
| Uncontrolled term | critical load |
| Uncontrolled term | 4H-SiC |
| Uncontrolled term | critical depth of cut |
| Uncontrolled term | Berkovich indenter |
| Uncontrolled term | cleavage strength |
| Uncontrolled term | nanoscratching |
| Uncontrolled term | power electronics |
| Uncontrolled term | high-temperature converters |
| Uncontrolled term | MEMS devices |
| Uncontrolled term | SiC power electronic devices |
| Uncontrolled term | neural interface |
| Uncontrolled term | neural probe |
| Uncontrolled term | neural implant |
| Uncontrolled term | microelectrode array |
| Uncontrolled term | MEA |
| Uncontrolled term | SiC |
| Uncontrolled term | 3C-SiC |
| Uncontrolled term | doped SiC |
| Uncontrolled term | n-type |
| Uncontrolled term | p-type |
| Uncontrolled term | amorphous SiC |
| Uncontrolled term | epitaxial growth |
| Uncontrolled term | electrochemical characterization |
| Uncontrolled term | MESFET |
| Uncontrolled term | simulation |
| Uncontrolled term | PAE |
| Uncontrolled term | bulk micromachining |
| Uncontrolled term | electrochemical etching |
| Uncontrolled term | circular membrane |
| Uncontrolled term | bulge test |
| Uncontrolled term | vibrometry |
| Uncontrolled term | mechanical properties |
| Uncontrolled term | Young’s modulus |
| Uncontrolled term | residual stress |
| Uncontrolled term | FEM |
| Uncontrolled term | semiconductor radiation detector |
| Uncontrolled term | microstrip detector |
| Uncontrolled term | power module |
| Uncontrolled term | negative gate-source voltage spike |
| Uncontrolled term | 4H-SiC, epitaxial layer |
| Uncontrolled term | Schottky barrier |
| Uncontrolled term | radiation detector |
| Uncontrolled term | point defects |
| Uncontrolled term | deep level transient spectroscopy (DLTS) |
| Uncontrolled term | thermally stimulated current spectroscopy (TSC) |
| Uncontrolled term | electron beam induced current spectroscopy (EBIC) |
| Uncontrolled term | pulse height spectroscopy (PHS) |
| Uncontrolled term | n/a |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Alquier, Daniel |
| Relationship | edt |
| Personal name | Wang, Jing |
| Relationship | edt |
| Personal name | La Via, Francesco |
| Relationship | edt |
| Personal name | Fraga, Mariana |
| Relationship | edt |
| Personal name | Saddow, Stephen Edward |
| Relationship | oth |
| Personal name | Alquier, Daniel |
| Relationship | oth |
| Personal name | Wang, Jing |
| Relationship | oth |
| Personal name | La Via, Francesco |
| Relationship | oth |
| Personal name | Fraga, Mariana |
| Relationship | oth |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Host name | www.oapen.org |
| Uniform Resource Identifier | <a href="https://mdpi.com/books/pdfview/book/2408">https://mdpi.com/books/pdfview/book/2408</a> |
| Access status | 0 |
| Public note | DOAB: download the publication |
| Host name | www.oapen.org |
| Uniform Resource Identifier | <a href="https://directory.doabooks.org/handle/20.500.12854/68646">https://directory.doabooks.org/handle/20.500.12854/68646</a> |
| Access status | 0 |
| Public note | DOAB: description of the publication |
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